Home > IGBT Power Module >

GT10J312(Q) IGBT Power Module Transistors IGBTs Single

Product Categories

KZ TECHNOLOGY (HONGKONG) LIMITED

Contact Now

Part Number : GT10J312(Q)

Manufacturer : Toshiba Semiconductor and Storage

Description : IGBT 600V 10A 60W TO220SM

Category : Transistors - IGBTs - Single

Family : Transistors - IGBTs - Single

Place of Origin : Original

MOQ : Negotiable

Price : Negotiable

Delivery Time : Negotiable

Payment Terms : T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 100000

Contact Now

Part Status	Obsolete
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	10A
Current - Collector Pulsed (Icm)	20A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Power - Max	60W
Switching Energy	-
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	400ns/400ns
Test Condition	300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr)	200ns
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-220SM
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.

Detection

GT10J312(Q) IGBT Power Module Transistors IGBTs Single

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	KZ TECHNOLOGY (HONGKONG) LIMITED
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!